BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,280 pcs
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2280 pcs | On Request | 1 | On Request | On Request | 2015+ | On Request | On Request |
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The Toshiba SSM3J133TU is a P-Channel MOSFET belonging to the U-MOSVI series. It features a drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of 5.5A at 25°C. The device exhibits a maximum drain-source on-resistance (Rds On) of 29.8mOhm at 3A and 4.5V gate-source voltage. Its gate threshold voltage (Vgs(th)) is a maximum of 1V at 1mA.
This MOSFET operates with drive voltages between 1.5V and 4.5V, and has a maximum gate-source voltage rating of ±8V. The input capacitance (Ciss) is a maximum of 840pF at 10V. With a power dissipation of 500mW (Ta) and an operating junction temperature of up to 150°C, it is suitable for various power management applications.
The SSM3J133TU is packaged in a surface-mount UFM package, specifically a 3-SMD, Flat Leads configuration. It is supplied in Tape & Reel (TR) or Cut Tape (CT) formats. The component is RoHS3 compliant.
20 V.
5.5 A at 25°C ambient.
29.8 mOhm maximum at 3A drain current and 4.5V gate-source voltage.
1 V maximum at 1mA drain current.
150°C.
UFM (ultra small flat lead) surface mount package, 3-SMD flat leads.
12.8 nC maximum at 4.5V gate voltage.