| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Toshiba SSM3J112TU,LF is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 1.1A at 25°C.
This MOSFET has a maximum power dissipation of 800mW at 25°C and an operating temperature range of -55°C to 150°C. The Rds On is specified at a maximum of 390mOhm at 500mA and 10V gate-source voltage. Input capacitance (Ciss) is a maximum of 86pF at 15V.
The component is housed in a UFM package with a 3-SMD, Flat Leads configuration, suitable for surface mounting. It has a gate threshold voltage (Vgs(th)) of 1.8V maximum at 100µA and a maximum gate-source voltage of ±20V.
Compliance information indicates RoHS3 compliance and MSL 1 rating. The part is designed for general-purpose switching applications where P-channel enhancement mode is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the SSM3J112TU,LFT is 30 V.
The continuous drain current of the SSM3J112TU,LFT is 1.1 A at 25°C.
The maximum Rds On for the SSM3J112TU,LFT is 390 mOhm, measured at 500mA and 10V.
The maximum input capacitance of the SSM3J112TU,LFT is 86 pF at 15V.
The maximum operating temperature of the SSM3J112TU,LFT is 150°C.
The SSM3J112TU,LFT is provided in a UFM package, which is a 3-SMD, Flat Leads type.
The maximum power dissipation of the SSM3J112TU,LFT is 800 mW at 25°C.