| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,783 pcs
|
3783 pcs | On Request | 1 | On Request | On Request | 0810+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SSM1N45BTF from ON Semiconductor is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 450V and a continuous drain current (Id) of 500mA. It features a low on-resistance (Rds On) of 4.25 Ohms at 250mA and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 3.7V at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is packaged in a TO-261-4, TO-261AA (SOT-223-4) configuration, designed for surface mounting. Its input capacitance (Ciss) is 240 pF at 25V, and gate charge (Qg) is 8.5 nC at 10V. The maximum power dissipation is 900mW (Ta).
Key electrical characteristics include a maximum gate-to-source voltage (Vgs) of ±50V and a drive voltage of 10V. The technology used is MOSFET (Metal Oxide). This component is suitable for various power switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 450V.
The maximum continuous drain current (Id) is 500mA at a case temperature of 25°C.
The SSM1N45BTF is available in a TO-261-4 (SOT-223-4) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance (Rds(on)) is 4.25 Ohms at a drain current of 250mA and gate-to-source voltage of 10V.
The maximum gate threshold voltage (Vgs(th)) is 3.7V at a drain current of 250µA.