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165 pcs
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165 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The SSF2116 from Good-Ark Semiconductor is a dual N-channel and P-channel complementary MOSFET designed for high efficiency applications. It utilizes advanced MOSFET process technology to achieve high cell density and low on-resistance, making it suitable for switch mode power supplies and other demanding applications.
Key electrical characteristics include a 20V drain-source breakdown voltage for the N-channel and -20V for the P-channel. The continuous drain current is rated at 3.8A for the N-channel and -2.5A for the P-channel at 25°C. It also features a low static drain-source on-resistance and fast switching capabilities.
This device is ideal for applications such as notebook computers, load switches, networking equipment, and hand-held devices. The SOT-23-6 package is suitable for surface mount assembly.
The SSF2116 is designed for reliability and efficiency, offering features like fast switching and reverse body recovery, along with low gate charge.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 20V for the N-channel and -20V for the P-channel.
The continuous drain current is 3.8A for the N-channel and -2.5A for the P-channel at 25°C.
The SSF2116 is supplied in a SOT-23-6 package.
The storage temperature range is -55°C to +150°C.
The maximum thermal resistance junction to ambient is 100°C/W.
The maximum static drain-source on-resistance for the N-channel is 40mΩ.
The maximum static drain-source on-resistance for the P-channel is 100mΩ.