| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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140,896 pcs
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140896 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor SS9018HBU is an NPN RF bipolar transistor suitable for various high-frequency applications. It operates with a maximum voltage of 15V and can handle up to 50mA of current. The transistor offers a DC current gain (hFE) of 97 minimum at 1mA and 5V, and a frequency response up to 1.1GHz.
This component is supplied in a TO-226-3, TO-92-3 (TO-226AA) package, designed for through-hole mounting. It has a power dissipation rating of 400mW and can operate within a temperature range of -55°C to 150°C (TJ). The SS9018HBU is specified as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected.
Its specifications make it a suitable choice for RF amplification and switching circuits where a compact, through-hole component is required. The TO-92-3 package is common in many electronic designs, facilitating ease of integration.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vce) is 15V.
The SS9018HBU is available in a TO-92-3 through-hole package.
The maximum junction temperature is 150°C.
The transition frequency is 1.1GHz.
The minimum DC current gain is 97 at 1mA collector current and 5V Vce.
The maximum power dissipation is 400mW.
The maximum collector current is 50mA.