| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,570 pcs
|
9570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SS9018GBU from ON Semiconductor is an NPN bipolar junction transistor (BJT) specifically designed for RF applications. It offers a high operating frequency of 1.1GHz, making it suitable for various high-frequency circuits.
This transistor is rated for a maximum operating voltage of 15V and a continuous collector current of 50mA. It can dissipate up to 400mW of power. The DC current gain (hFE) is a minimum of 72 at 1mA and 5V. The operating temperature range extends up to 150°C (TJ).
Packaged in a standard TO-92-3 (TO-226AA) through-hole configuration, the SS9018GBU is designed for easy integration into printed circuit boards. Its robust construction and specified parameters make it a reliable choice for RF amplification and switching applications.
Environmental compliance includes RoHS3 compliance and an MSL 1 rating, indicating unlimited shelf life under standard conditions. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage (Vce) is 15V.
The maximum junction temperature is 150°C.
It comes in a TO-226-3, TO-92-3 (TO-226AA) through-hole package.
The minimum DC current gain is 72 at 1mA collector current and 5V Vce.
The transition frequency is 1.1GHz.