| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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37,707 pcs
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37707 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor SS9012GTA is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It features a maximum collector-emitter voltage (VCEO) of 20V and a continuous collector current of 0.5A.
With a power dissipation rating of 625mW, this transistor is designed for through-hole mounting in a standard TO-92-3 package. Key electrical characteristics include a minimum DC current gain (hFE) of 112 at 50mA and 1V, and a collector-emitter saturation voltage (Vce(sat)) of 0.6V at 50mA and 500mA.
The operating temperature range for the SS9012GTA is from -55°C to +150°C. Its through-hole mounting style and TO-92-3 package make it suitable for breadboarding and through-hole PCB assembly.
This component is manufactured by ON Semiconductor and belongs to the SS9012 series. It is a single PNP transistor configuration.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is -20V.
The maximum DC collector current is 0.5A.
The power dissipation is 625mW.
The SS9012GTA is in a TO-92-3 through-hole package.
The operating junction temperature range is -55°C to +150°C.
The DC current gain (hFE) ranges from 64 to 202, with a minimum of 112 at 50mA and 1V.