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SS9012GBU The ON Semiconductor SS9012GBU is a PNP bipolar transistor designed for general-purpose applications. It features a 20V collector-emitter voltage and 0.5A continuous collector current.
Mfr Part #:

SS9012GBU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SS9012GBU is a PNP bipolar transistor designed for general-purpose applications. It features a 20V collector-emitter voltage and 0.5A continuous collector current.
✓ Total Stock: 840 pcs
$ Price Range: $0.51

SS9012GBU Available from 1 distributor

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✓ Non-Authorised
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840 pcs
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SS9012GBU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SS9012GBU Description

Short technical summary and product information.

The ON Semiconductor SS9012GBU is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It offers a maximum collector-emitter voltage (VCEO) of 20V and a maximum collector current (IC) of 0.5A. The device has a power dissipation rating of 625mW and operates within a temperature range of -55°C to +150°C.

 

This transistor is housed in a standard TO-92-3 package, making it suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 64 at 50mA and 1V, and a collector-emitter saturation voltage (Vce(sat)) of -0.18V. The SS9012GBU is manufactured by ON Semiconductor and is part of the SS9012 series.

 

Its specifications make it a versatile component for amplification and switching applications in consumer electronics, industrial controls, and other general-purpose designs. The through-hole mounting facilitates easy integration into breadboards and through-hole PCBs.

SS9012GBU Quick Information

Product Type: Bipolar Transistor
Series: SS9012
Canonical Name: ON Semiconductor SS9012GBU PNP Bipolar Transistor
Subcategory: BJT

SS9012GBU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SS9012GBU Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SS9012GBU Features

  • PNP bipolar junction transistor.
  • 20V collector-emitter voltage rating.
  • 0.5A continuous collector current.
  • 625mW maximum power dissipation.
  • TO-92-3 through-hole package.

SS9012GBU Applications

  • General purpose amplification circuits.
  • Low power switching applications.
  • Consumer electronics designs.
  • Industrial control systems.

SS9012GBU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the SS9012GBU?

The operating junction temperature range is -55°C to +150°C.

What package type does the SS9012GBU come in?

It comes in a TO-92-3 through-hole package.

What is the transistor polarity of the SS9012GBU?

It is a PNP transistor.

What are the voltage ratings for the SS9012GBU?

Collector-emitter voltage (VCEO) is -20V, collector-base voltage (VCBO) is -40V, and emitter-base voltage (VEBO) is -5V.

What is the maximum collector current of the SS9012GBU?

The maximum DC collector current is 0.5A.

What is the DC current gain (hFE) of the SS9012GBU?

The hFE ranges from 64 (minimum at 50mA, 1V) to 202 (maximum).

What is the power dissipation rating of the SS9012GBU?

The power dissipation is 625mW.

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