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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,942 pcs
|
9942 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage | |
| Collector Current (Unspecified condition) | |
| Collector Cutoff Current (Maximum @ VCB=50 V, IE=0) | |
| Collector Cutoff Current (Maximum) | |
| Collector Emitter Breakdown Voltage (Maximum) | |
| Collector Emitter Breakdown Voltage (Minimum @ IC =1 mA, IB =0) | |
| Collector Emitter Saturation Voltage (Maximum @ 1 mA, 10 mA) | |
| Collector Emitter Saturation Voltage (Maximum @ Ic=10 mA, Ib=1 mA) | |
| Collector Power Dissipation | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ @ Ic, Vce) | |
| DC Current Gain Hfe (Minimum/Typical/Maximum @ VCE = 5 V, IC = 1 mA) | |
| Emitter Cut-off Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Frequency - Transition | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SS9011GBU is an NPN epitaxial silicon transistor manufactured by On Semiconductor. It is designed for general-purpose applications and is suitable for use as an AM converter and AM/FM IF amplifier.
Key electrical specifications include a collector-emitter voltage (VCEO) of 30V, a collector current (IC) of 30mA, and a collector power dissipation (PC) of 400mW. The DC current gain (hFE) ranges from 28 to 198 at 1mA collector current and 5V collector-emitter voltage. The current gain bandwidth product (fT) is 2MHz.
This transistor comes in a TO-92 package, a common through-hole mounting type. The operating junction temperature is rated up to 150°C, with storage temperatures ranging from -55°C to 150°C. The device is classified under the SS9011 series, with hFE classifications D through I available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the SS9011GBU is 30V.
The maximum collector current (IC) for the SS9011GBU is 30mA.
The SS9011GBU has a maximum power dissipation of 400mW.
The SS9011GBU can operate at a junction temperature up to 150°C.
The SS9011GBU is supplied in a TO-92-3 package.
The DC current gain (hFE) of the SS9011GBU is a minimum of 28 and a maximum of 198 at 1mA collector current and 5V collector-emitter voltage.
The transition frequency (fT) for the SS9011GBU is 2MHz.