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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
74,955 pcs
|
74955 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter Voltage (Maximum @ IC = -800 mA, IB = -80 mA) | |
| Base Emitter Voltage (Maximum @ VCE = -1 V, IC = -10 mA) | |
| Breakdown Voltage (Minimum @ IC = -100 /C 0109 A, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 2 mA, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = -100 /C 0109 A, IC = 0) | |
| Capacitance | |
| Collector Current (Maximum) | |
| Current | |
| DC Current Gain (Minimum @ VCE = 1 V, IC = 5 mA) | |
| DC Current Gain (Minimum/Maximum @ VCE = -1 V, IC = -800 mA) | |
| DC Current Gain (Minimum/Typical/Maximum @ VCE = 1 V, IC = 100 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain Bandwidth Product (Minimum/Maximum @ VCE = -10 V, IC = -50 mA) | |
| Halogen Free | |
| Junction Temperature | |
| Leakage Current (Maximum @ VCB = 35 V, IE = 0) | |
| Leakage Current (Maximum @ VEB = 6 V, IC = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum) | |
| Power Dissipation Derate Above +25°C | |
| Saturation Voltage (Maximum @ IC = -800 mA, IB = -80 mA) | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SS8550DBU is a PNP epitaxial silicon transistor manufactured by On Semiconductor. It is designed for use as a 2W output amplifier in portable radios, operating in Class B push-pull configuration. This transistor is complementary to the SS8050.
Key electrical characteristics include a collector-emitter breakdown voltage of -25V and a collector current rating of 1.5A. It features a DC current gain (hFE) of at least 160 at 100mA and 1V. The device operates at a junction temperature up to 150°C and has a power dissipation of 1W.
The SS8550DBU is housed in a TO-92-3 package, suitable for through-hole mounting. It is Pb-free and halogen-free, complying with RoHS standards. This component is well-suited for audio amplification circuits in portable electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Through-hole TO-92-3 (TO-226AA compatible).
150°C (junction temperature).
Minimum 45, maximum 300 (at VCE=-1V, IC=-100mA). Typical gain is 160.
-0.5 V maximum at IC=-800mA, IB=-80mA.
100 MHz to 200 MHz at VCE=-10V, IC=-50mA.
15 pF maximum at VCB=-10V, f=1MHz.
1 Watt (derate 8 mW/°C above 25°C).