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SS8550CBU The ON Semiconductor SS8550CBU is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It features a 25V collector-emitter voltage and a 1.5A collector current.
Mfr Part #:

SS8550CBU

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SS8550CBU is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It features a 25V collector-emitter voltage and a 1.5A collector current.
✓ Total Stock: 22,067 pcs
$ Price Range: $0.51

SS8550CBU Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
10,000 pcs
On Request
10000 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
7,197 pcs
On Request
7197 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
4,870 pcs
On Request
4870 pcs On Request 1 On Request On Request 19+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SS8550CBU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Junction Temperature
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SS8550CBU Description

Short technical summary and product information.

The ON Semiconductor SS8550CBU is a PNP epitaxial silicon transistor designed for applications such as 2W output amplifiers in portable radios. It is complementary to the SS8050 transistor.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of -25V and a collector-base voltage (VCBO) of -40V. The maximum continuous collector current (IC) is 1.5A. The device offers a DC current gain (hFE) ranging from 45 to 300 depending on the test conditions. Its gain bandwidth product (fT) is up to 200MHz.

 

This transistor is housed in a TO-92-3 package and is designed for through-hole mounting. It operates within a temperature range of -65°C to 150°C (TJ). The power dissipation is rated at 1W.

 

The SS8550CBU is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

SS8550CBU Quick Information

Product Type: PNP Transistor
Series: SS8550
Canonical Name: SS8550CBU PNP Epitaxial Silicon Transistor
Subcategory: Transistors

SS8550CBU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SS8550CBU Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SS8550CBU Features

  • PNP Epitaxial Silicon Transistor
  • 25V Collector-Emitter Voltage
  • 1.5A Maximum Collector Current
  • 200MHz Gain Bandwidth Product
  • TO-92-3 Through Hole Package

SS8550CBU Applications

  • Used in portable radio amplifiers
  • Suitable for Class B push-pull operation
  • General purpose amplification
  • General purpose switching

SS8550CBU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is -25V.

What is the package type?

The package is TO-92-3, a through-hole package.

What is the operating temperature range?

The operating temperature range is -65°C to +150°C.

What is the maximum collector current?

The maximum continuous collector current is 1.5A.

What is the DC current gain (hFE)?

The DC current gain (hFE) ranges from 85 to 300 depending on test conditions.

What is the gain bandwidth product (fT)?

The gain bandwidth product is typically 100 MHz to 200 MHz.

What is the collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is -0.5V at IC=-800mA, IB=-80mA.

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