| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SS8550C is a PNP bipolar junction transistor manufactured by Samsung Electronics. This component is housed in a standard TO-92 plastic package, suitable for through-hole mounting.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of -25V and a maximum collector-base voltage (Vcb) of -40V. The emitter-base voltage (Veb) is rated at a maximum of -6V. It can handle a continuous collector current (Ic) of up to -1.5A and has a maximum collector dissipation (Pc) of 1W.
The DC current gain (hFE) for the SS8550C ranges from 120 to 200. It also possesses a minimum transition frequency (fT) of 100 MHz. The operating and storage junction temperature range is from -65°C to +150°C.
This transistor is complementary to the NPN transistor SS8050C. SMD versions like MMBT3702, MPS8550S, and MPS8550S-C are available, offering similar parameters for surface-mount applications. Equivalent replacements include MPS750, MPS750G, MPS8550, MPS8550C, and ZTX949.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-25 V
-1.5 A
120 to 200
TO-92
-65 to +150 °C