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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,548 pcs
|
16548 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| BFR Free | |
| Base - Emitter Saturation Voltage | |
| Base-Emitter On Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector Current | |
| Collector Cut-Off Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ Vce=1 V, Ic=100 mA) | |
| DC Current Gain Hfe (Minimum @ VCE = 1 V, IC = 5 mA) | |
| DC Current Gain Hfe (Minimum @ VCE = 1 V, IC = 800 mA) | |
| Emitter Cut-off Current | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Pb-Free | |
| Power | |
| Power Dissipation | |
| Power Dissipation Derate Above +25°C | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SS8550BBU is a PNP epitaxial silicon transistor manufactured by On Semiconductor. It is designed for 2W output amplifier applications in portable radios operating in Class B push-pull configuration. This transistor is complementary to the SS8050.
Key electrical characteristics include a collector-emitter breakdown voltage of -25V and a collector current rating of -1.5A. It offers a DC current gain (hFE) of up to 300 at -100mA and 1V, with a saturation voltage (VCEsat) of 500mV at 800mA and 80mA. The current gain bandwidth product (fT) is 200MHz.
This device operates at a junction temperature up to 150°C and has a power dissipation of 1W. It is housed in a TO-92-3 package suitable for through-hole mounting.
The SS8550BBU is Pb-free, halogen-free, BFR-free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Minimum -25 V at IC = -2 mA with base open.
-1.5 A.
85 to 300 at VCE = -1 V and IC = -100 mA; extends to 45 minimum at IC = -5 mA and 40 minimum at IC = -800 mA.
Minimum 100 MHz, typical 200 MHz at VCE = -10 V and IC = -50 mA.
TO-92-3 (TO-226AA) through-hole package.
Maximum junction temperature is 150 °C; storage temperature range is -65 °C to 150 °C.