SS8050DTA The SS8050DTA is an NPN bipolar junction transistor from ON Semiconductor. It offers a collector-emitter breakdown voltage of 25V and a maximum collector current of 1.5A, with a DC current gain range of 85 to 300.
Mfr Part #:

SS8050DTA

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SS8050DTA is an NPN bipolar junction transistor from ON Semiconductor. It offers a collector-emitter breakdown voltage of 25V and a maximum collector current of 1.5A, with a DC current gain range of 85 to 300.
Total Stock: 391,830 pcs
$ Price Range: $0.51

SS8050DTA Available from 4 distributors

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286,000 pcs
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91,007 pcs
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8823 pcs On Request 1 On Request On Request 17+ On Request On Request
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SS8050DTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (Minimum/Maximum @ Vce = 1 V, Ic = 100 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SS8050DTA Description

Short technical summary and product information.

The SS8050DTA is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general purpose switching and amplification applications. The transistor features a collector-emitter breakdown voltage (VCEO) of 25V minimum and a maximum collector current (IC) of 1.5A.

 

The device is housed in a TO92-3 through-hole package, suitable for prototyping and low-to-medium power designs. The DC current gain (hFE) is specified at VCE = 1V and IC = 100mA, with a range of 85 to 300, ensuring consistent performance across units.

 

With a compact footprint and reliable electrical characteristics, the SS8050DTA can be used in audio amplifiers, driver stages, and signal processing circuits. The parts are well-suited for applications requiring moderate voltage and current handling in a space-efficient package.

SS8050DTA Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: SS8050DTA NPN Bipolar Transistor
Subcategory: Single NPN

SS8050DTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SS8050DTA Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SS8050DTA Features

  • 25V collector-emitter breakdown voltage.
  • 1.5A maximum collector current rating.
  • DC current gain from 85 to 300.
  • TO92-3 through-hole package.
  • NPN bipolar transistor design.

SS8050DTA Applications

  • General purpose switching and amplification.
  • Used in low power audio circuits.
  • Suitable for driver stages.
  • Ideal for signal processing circuits.

SS8050DTA FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the SS8050DTA?

The minimum collector-emitter breakdown voltage is 25 V at IC = 2 mA, IB = 0.

What is the maximum collector current rating?

The maximum collector current is 1.5 A.

What is the DC current gain (hFE) range?

The DC current gain ranges from 85 to 300 at VCE = 1 V, IC = 100 mA.

What package type is the SS8050DTA available in?

The SS8050DTA is available in a TO92-3 through-hole package.

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