| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
121,007 pcs
|
121007 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Operating Temperature | |
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| Power Dissipation | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SS8050DBU is an NPN epitaxial silicon transistor manufactured by On Semiconductor. It is suitable for 2W output amplifier applications in Class B push-pull operation, offering a complementary function to the SS8550.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 25V and a continuous collector current (IC) of 1.5A. The transistor features a DC current gain (hFE) ranging from 85 to 300 at 100mA and 1V, and a current gain bandwidth product (fT) of 100MHz at 50mA and 10V.
This device is supplied in a TO-92-3 package, designed for through-hole mounting. It operates at junction temperatures up to 150°C and has a power dissipation rating of 1W. The transistor is Pb-free, Halogen Free/BFR Free, and RoHS compliant.
Applications include output amplification in portable audio devices and other general-purpose amplification circuits requiring an NPN transistor with these specifications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V
1.5A
TO-92-3 (through-hole)
Maximum 150°C
Minimum 85, maximum 300 at VCE=1V, IC=100mA
100 MHz typical
Yes, it is Pb-Free