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SS8050CTA The SS8050CTA is an NPN Epitaxial Silicon Transistor from ON Semiconductor. It features a 25V collector-emitter voltage and 1.5A collector current.
Mfr Part #:

SS8050CTA

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SS8050CTA is an NPN Epitaxial Silicon Transistor from ON Semiconductor. It features a 25V collector-emitter voltage and 1.5A collector current.
✓ Total Stock: 1,082 pcs
$ Price Range: $0.51

SS8050CTA Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Trace Tec ✓
Non-Authorised Inventory information
82 pcs
On Request
82 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SS8050CTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation
SVHC Present
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SS8050CTA Description

Short technical summary and product information.

The SS8050CTA is an NPN Epitaxial Silicon Transistor manufactured by ON Semiconductor. This component is designed for applications requiring a 25V collector-emitter voltage and a maximum collector current of 1.5A. It operates with a frequency gain bandwidth product of 100MHz.

 

This transistor is housed in a TO-92-3 package, suitable for through-hole mounting. Key electrical characteristics include a DC current gain (hFE) of 120 at 100mA and 1V, and a collector-emitter saturation voltage (Vce(sat)) of 500mV at 800mA and 80mA.

 

The device has a maximum power dissipation of 1W and can operate at junction temperatures up to 150°C. It is complementary to the SS8550 and is often used as a 2W output amplifier in portable radios operating in Class B push-pull configuration.

 

Compliance information indicates the device is Pb-Free and Halogen Free, with RoHS3 compliance. The Moisture Sensitivity Level (MSL) is 1.

SS8050CTA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: NPN Epitaxial Silicon Transistor
Subcategory: Bipolar (BJT) - Single

SS8050CTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SS8050CTA Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SS8050CTA Features

  • NPN Epitaxial Silicon Transistor
  • 25V Collector-Emitter Voltage
  • 1.5A Collector Current
  • 100MHz Frequency Gain Bandwidth
  • TO-92-3 Through Hole Package

SS8050CTA Applications

  • Used in portable radio amplifiers
  • Suitable for Class B push-pull circuits
  • General purpose amplification tasks
  • Low power switching applications

SS8050CTA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SS8050CTA?

25V.

What package is the SS8050CTA available in?

TO-92-3 (TO-226-3) formed leads.

What is the maximum operating junction temperature?

150°C.

What is the DC current gain (hFE) of the SS8050CTA?

Minimum 120 at 100mA collector current and 1V Vce.

What is the transition frequency (fT) of the SS8050CTA?

100MHz.

What is the collector-emitter saturation voltage?

500mV maximum at 800mA collector current and 80mA base current.

What is the maximum power dissipation?

1W.

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