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SS8050CBU The SS8050CBU is an NPN bipolar junction transistor from On Semiconductor, designed for general-purpose applications. It offers a 25V collector-emitter voltage and a 1.5A collector current.
Mfr Part #:

SS8050CBU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SS8050CBU is an NPN bipolar junction transistor from On Semiconductor, designed for general-purpose applications. It offers a 25V collector-emitter voltage and a 1.5A collector current.
✓ Total Stock: 122,894 pcs
$ Price Range: $0.51

SS8050CBU Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
121,007 pcs
On Request
121007 pcs On Request 1 On Request On Request 21+ On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
1,887 pcs
On Request
1887 pcs On Request 1 On Request On Request On Request On Request On Request
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SS8050CBU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Container Type
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SS8050CBU Description

Short technical summary and product information.

The SS8050CBU is a general-purpose NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for applications such as output amplifiers in portable radios operating in Class B push-pull configuration.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 25V and a continuous collector current (IC) of 1.5A. The device exhibits a DC current gain (hFE) ranging from 85 to 300 at 100mA and 1V, with a typical minimum gain of 120 at 100mA and 1V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 0.5V at 800mA and 80mA base current, and the base-emitter saturation voltage (VBE(sat)) is 1.2V under the same conditions.

 

This transistor operates at a junction temperature up to 150°C and has a power dissipation of 1W at 25°C. It features a current gain bandwidth product (fT) of 100MHz at 10V and 50mA. The SS8050CBU is complementary to the SS8550 transistor.

 

The SS8050CBU is supplied in a TO-92-3 package, suitable for through-hole mounting. It is Pb-free, Halogen-free, and BFR-free, complying with RoHS standards.

SS8050CBU Quick Information

Product Type: NPN Transistor
Series: SS8050
Canonical Name: SS8050CBU NPN Epitaxial Silicon Transistor
Subcategory: Bipolar (BJT) - Single

SS8050CBU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SS8050CBU Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SS8050CBU Features

  • NPN Epitaxial Silicon Transistor
  • 25V Collector-Emitter Voltage
  • 1.5A Continuous Collector Current
  • 100MHz Current Gain Bandwidth Product
  • TO-92-3 Through Hole Package

SS8050CBU Applications

  • 2 W output amplifier for portable radios
  • Class B push-pull audio amplification
  • General purpose switching and amplification
  • Complementary pair with SS8550 PNP transistor

SS8050CBU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of SS8050CBU?

25V minimum at IC=2mA, IB=0.

What package is the SS8050CBU available in?

TO-226-3, TO-92-3 (TO-226AA) through-hole package.

What is the maximum operating junction temperature?

150°C.

What is the DC current gain (hFE) range?

85 to 300 at VCE = 1V, IC = 100mA.

What is the maximum power dissipation?

1W at 25°C ambient temperature.

What is the transition frequency (fT)?

100 MHz typical at VCE=10V, IC=50mA.

What is the collector-emitter saturation voltage?

0.5V maximum at IC=800mA, IB=80mA.

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