| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The Comchip Technology SS8050-G is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a compact SOT-23-3 surface mount package, making it ideal for space-constrained designs.
Key electrical characteristics include a maximum collector-emitter voltage of 25V and a maximum collector current of 1.5A. The transistor offers a DC current gain (hFE) of at least 100 at 10mA and 1V, with a Vce saturation of 400mV maximum at 5mA and 50mA. Its transition frequency (fT) is rated at 100MHz.
Operating at junction temperatures up to 150°C, this device also has a power dissipation rating of 300mW. The SS8050-G is designed for surface mounting, requiring appropriate soldering techniques for reliable integration into circuit boards.
This transistor is specified with RoHS3 compliance, MSL 1, and REACH unaffected status, though these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 25V.
The maximum collector current is 1.5A.
The maximum power dissipation is 300mW.
The typical transition frequency is 100MHz.
The minimum hFE is 100 at 10mA collector current and 1V Vce.
The maximum junction temperature is 150°C.
It is available in a surface-mount SOT23-3 package, also compatible with TO-236-3 and SC-59.