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609 pcs
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609 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The JSCJ SS8050 is a versatile NPN bipolar junction transistor (BJT) designed for general-purpose applications. Encapsulated in a standard TO-92 package, it is suitable for through-hole mounting on printed circuit boards.
This transistor features a collector-emitter breakdown voltage (VCEO) of 25V and a collector-base breakdown voltage (VCBO) of 40V. It can handle a continuous collector current (IC) of up to 1.5A and has a maximum power dissipation (PC) of 1W at 25°C ambient temperature. The DC current gain (hFE) ranges from 85 to 400 under specific test conditions (VCE=1V, IC=100mA).
Key electrical characteristics include a collector-emitter saturation voltage (VCE(sat)) of 0.5V maximum and a base-emitter saturation voltage (VBE(sat)) of 1.2V maximum at high current levels (IC=800mA, IB=80mA). The transition frequency (fT) is 100MHz minimum at VCE=10V and IC=50mA, indicating suitability for moderate frequency applications.
The operating junction and storage temperature range is from -55°C to 150°C, with a thermal resistance from junction to ambient (RθJA) of 125°C/W. The SS8050 is AEC-Q101 qualified, suggesting reliability for automotive and industrial environments.
The maximum collector-emitter voltage (VCEO) is 25V.
The maximum continuous collector current is 1.5A.
The DC current gain ranges from 85 to 400 at VCE = 1V, IC = 100mA.
The transition frequency is 100 MHz minimum at VCE = 10V, IC = 50mA.
The SS8050 is available in a TO-92 through-hole package.
The operating junction and storage temperature range is -55°C to 150°C.
The collector-emitter saturation voltage is 0.5V maximum at IC = 800mA, IB = 80mA.