| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
700 pcs
|
700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
116 pcs
|
116 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SQS484EN-T1_GE3 is an N-channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for efficient power switching in a variety of circuits. The device features a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) rating of 16A, making it suitable for moderate power applications. The MOSFET is housed in a compact PPAK1212-8 surface-mount package, which offers good thermal performance and a small footprint for space-constrained designs. This component is typically used in DC-DC converters, load switches, and power management systems where reliable switching and low on-resistance are required. The device is lead-free and RoHS-compliant, supporting environmentally friendly manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
16A.
PPAK1212-8 (surface-mount).