| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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208 pcs
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208 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The Vishay Dale SQS482EN-T1_GE3 is an N-Channel power MOSFET designed for demanding applications, including automotive. It operates with a drain-source voltage of 30V and can handle a continuous drain current of 16A at 25°C.
This MOSFET offers a low on-resistance of 0.0085 Ohms at a gate-source voltage of 10V, ensuring efficient power transfer. It is built using TrenchFET technology and is AEC-Q101 qualified, indicating its suitability for automotive environments. The device operates across a wide temperature range from -55°C to 175°C.
Packaged in a compact PowerPAK 1212-8 surface-mount case, the SQS482EN-T1_GE3 is suitable for space-constrained designs. Its robust construction and high-temperature capability make it a reliable choice for various power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
PowerPAK-1212-8 surface mount.
-55°C to 175°C.
16A at TC=25°C.
0.0085Ω maximum at VGS=10V.
39nC maximum at VGS=10V.
48mJ.