| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQS481ENW-T1_GE3 is a P-Channel MOSFET designed for demanding applications. It boasts a high drain-source voltage rating of 150V and a continuous drain current capability of 4.7A at 25°C.
Key electrical characteristics include a maximum on-resistance of 1.095 Ohm at 5A and 10V gate-source voltage, and a gate threshold voltage of 3.5V. The MOSFET operates within a wide temperature range of -55°C to 175°C.
This component is housed in a compact PowerPAK 1212-8 package, suitable for surface mounting. Its TrenchFET power MOSFET technology ensures efficient performance. The device is also AEC-Q101 qualified, indicating its suitability for automotive applications.
Absolute maximum ratings include a continuous source current of 8A and a pulsed drain current of 19A. Power dissipation is rated at 62.5W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-150V
PowerPAK 1212-8 surface mount package.
-55°C to 175°C.
-4.7A at 25°C case temperature.
1.095 Ohm maximum at 5A and 10V gate drive.
3.5V maximum at 250µA drain current.
62.5W at 25°C case temperature.