| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Vishay Dale SQS423EN-T1_GE3 is an automotive-qualified P-Channel MOSFET designed for power applications. It offers a 30V drain-source voltage and a continuous drain current of 16A at 25°C.
Key electrical characteristics include a low on-resistance of 0.021 Ohms at 12A and 10V Vgs, and 0.060 Ohms at Vgs of 4.5V. The device also features a gate charge of 26 nC and an input capacitance of 1975 pF.
This MOSFET is housed in a PowerPAK 1212-8 surface-mount package, suitable for applications requiring efficient thermal performance. It operates within a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 62.5W at 25°C.
The SQS423EN-T1_GE3 is AEC-Q101 qualified, 100% Rg and UIS tested, and built with TrenchFET® power MOSFET technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30 V.
The maximum continuous drain current is 16A at 25°C.
The on-resistance is 0.021 Ohms at 12A and 10V Vgs.
The operating junction and storage temperature range is -55°C to 175°C.
It is in a PowerPAK 1212-8 surface mount package.