| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,674 pcs
|
2674 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SQS415ENW-T1_GE3 is a P-Channel MOSFET from Vishay Dale, designed for power management and load switching applications. It features a drain-source voltage rating of 40V and a continuous drain current of 16A, making it suitable for medium-power circuits.
This MOSFET is housed in a compact PPAK1212-8W surface mount package, which enables efficient thermal performance and space-saving on PCBs. The package is designed for automated assembly and is compatible with standard reflow soldering processes.
Typical applications include power supply switching, battery protection circuits, and DC-DC converters where low-side P-channel switching is required. The device is optimized for low on-resistance and fast switching, though specific RDS(on) and gate charge values should be obtained from the full datasheet for detailed design calculations.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
16A.
PPAK1212-8W.
P-channel.