| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,038 pcs
|
1038 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SQS411ENW-T1_GE3 is a P-channel enhancement mode MOSFET manufactured by Vishay Dale. This single device is optimized for low-voltage, high-speed power switching applications. It operates with a maximum drain-to-source voltage of -40V and supports a continuous drain current of -16A at both 25°C and 125°C case temperatures. The component delivers a typical on-resistance of 27.3mΩ at a gate-source voltage of 10V, ensuring minimal conduction losses during operation.
Thermal performance is supported by a maximum power dissipation of 39.5W at 25°C case temperature, reducing to 13.2W at 125°C. The device includes robust avalanche capabilities, handling a single pulse avalanche current of -19A and an energy rating of 18mJ with a 0.1mH inductance. The operating junction and storage temperature range spans from -55°C to +175°C, making it suitable for demanding industrial and automotive environments.
Packaged in a PPAK1212-8W surface-mount footprint, the SQS411ENW-T1_GE3 offers efficient thermal management with a junction-to-case thermal resistance of 3.8°C/W. Its low gate charge of 50nC at 10V facilitates fast switching speeds while minimizing driver power requirements. This MOSFET is well-suited for DC-DC converters, motor control circuits, and load switch designs where compact size and high reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40 V
-16 A at both 25°C and 125°C case temperatures
+175°C
27.3 mΩ
50 nC
18 mJ with a 0.1 mH inductance
3.8°C/W measured at the drain terminal