| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
118 pcs
|
118 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SQS401EN-T1_GE3 is a P-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 16A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 29mOhm at 12A and 10V gate-source voltage, and 47mOhm at Vgs = -4.5V. The device has a gate threshold voltage (Vgs(th)) of 2.5V at 250µA and a gate-source voltage range of ±20V.
This MOSFET utilizes TrenchFET technology and is AEC-Q101 qualified. It operates within a junction temperature range of -55°C to 175°C. The component is packaged in a surface-mount PowerPAK 1212-8 case.
With a maximum power dissipation of 62.5W at 25°C, the SQS401EN-T1_GE3 is suitable for various power management tasks. It is also 100% Rg and UIS tested, ensuring reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40V.
The device is available in a PowerPAK 1212-8 surface-mount package.
The junction operating temperature range is -55°C to 175°C.
The continuous drain current is rated at 16A at Tc=25°C.
The maximum on-resistance is 29mΩ at Vgs=10V and 12A drain current.
The maximum gate-source voltage is ±20V.