| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,732 pcs
|
1732 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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The Vishay Dale SQM85N15-19_GE3 is an automotive-qualified N-Channel power MOSFET. It is built using TrenchFET® technology, offering low thermal resistance and high performance.
Key electrical specifications include a maximum drain-source voltage (Vds) of 150V and a continuous drain current (ID) of 85A at 25°C case temperature. The on-state resistance (Rds On) is a low 19mOhm at 30A drain current and 10V gate-source voltage. The device operates over a wide temperature range from -55°C to 175°C.
This MOSFET is housed in a TO-263 (D²Pak) surface-mount package, suitable for applications requiring efficient power handling. It is AEC-Q101 qualified, 100% Rg and UIS tested, making it reliable for demanding automotive and industrial designs.
With a maximum power dissipation of 375W at 25°C case temperature, the SQM85N15-19_GE3 is well-suited for power switching, motor control, and power supply applications where robust performance and thermal management are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.72 | $1.72 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 150 V.
The typical on-state resistance is 19 mOhm at 30A drain current and 10V gate-source voltage.
The continuous drain current is 85A at 25°C case temperature.
The operating junction and storage temperature range is -55°C to 175°C.
The SQM85N15-19_GE3 is supplied in a TO-263 (D²Pak) package.