SQM70060EL_GE3 The Vishay SQM70060EL_GE3 is an N-Channel MOSFET designed for high-power applications. It features a 100V drain-source voltage and a 75A continuous drain current.
Mfr Part #:

SQM70060EL_GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay SQM70060EL_GE3 is an N-Channel MOSFET designed for high-power applications. It features a 100V drain-source voltage and a 75A continuous drain current.
✓ Total Stock: 30,585 pcs
$ Price Range: $2.56

SQM70060EL_GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised

SQM70060EL_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQM70060EL_GE3 Description

Short technical summary and product information.

The Vishay SQM70060EL_GE3 is an automotive-qualified N-Channel power MOSFET. It utilizes TrenchFET® technology for low thermal resistance and high performance.

 

Key electrical specifications include a 100V drain-source breakdown voltage and a continuous drain current of 75A at 25°C (67A at 125°C). The on-state resistance (RDS(on)) is as low as 5.9mΩ at a gate-source voltage of 10V. The device operates over a wide temperature range from -55°C to +175°C.

 

This MOSFET is housed in a TO-263 (D²Pak) surface-mount package, suitable for various power management applications. It is AEC-Q101 qualified, indicating its suitability for automotive environments. The part is also 100% R_g and UIS tested for reliability.

 

With a maximum power dissipation of 166W at 25°C, the SQM70060EL_GE3 is designed for demanding applications requiring efficient power switching and thermal management.

SQM70060EL_GE3 Quick Information

Product Type: MOSFET
Series: SQ
Canonical Name: Vishay Dale SQM70060EL_GE3 N-Channel 100V 75A TO-263 MOSFET
Subcategory: N-Channel

SQM70060EL_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQM70060EL_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQM70060EL_GE3 Features

  • Automotive-qualified N-Channel MOSFET.
  • 100V drain-source breakdown voltage.
  • 75A continuous drain current.
  • Low 5.9mΩ Rds(on) at Vgs=10V.
  • TO-263 surface-mount package.

SQM70060EL_GE3 Applications

  • Power supply switching applications.
  • Motor control circuits.
  • Automotive power management.
  • High-efficiency power conversion.

SQM70060EL_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SQM70060EL_GE3?

The drain-source breakdown voltage is 100V.

What is the continuous drain current for the SQM70060EL_GE3?

The continuous drain current is 75A at 25°C and 67A at 125°C.

What is the maximum on-state resistance (Rds On) of the SQM70060EL_GE3?

The maximum on-state resistance is 5.9mΩ at a gate-source voltage of 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the SQM70060EL_GE3 MOSFET supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

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