SQM50P08-25L_GE3 P-Channel MOSFET with 80V drain-source breakdown voltage and 50A continuous drain current. Features low on-resistance of 25mOhm at 10V gate drive.
Mfr Part #:

SQM50P08-25L_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
P-Channel MOSFET with 80V drain-source breakdown voltage and 50A continuous drain current. Features low on-resistance of 25mOhm at 10V gate drive.
✓ Total Stock: 2,620 pcs
$ Price Range: $2.56

SQM50P08-25L_GE3 Available from 1 distributor

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✓ Non-Authorised
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2,620 pcs
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SQM50P08-25L_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQM50P08-25L_GE3 Description

Short technical summary and product information.

The SQM50P08-25L_GE3 is a P-Channel MOSFET from Vishay Dale designed for high-efficiency power management. It offers a drain-source breakdown voltage of -80V and a continuous drain current of -50A at 25°C case temperature. The device features a low on-resistance of 25mOhm maximum at Vgs = -10V and Id = -12.5A, and 31mOhm at Vgs = -4.5V. Gate threshold voltage is typically 1.5V with a maximum of 2.5V at Id = -250µA. Input capacitance is 5350pF at Vds = 25V, and total gate charge is 137nC at Vgs = 10V. The MOSFET is capable of handling pulsed drain currents up to -120A and single pulse avalanche energy of 110mJ. Maximum power dissipation is 150W at 25°C case temperature, derated to 50W at 125°C. The operating junction temperature range is -55°C to 175°C. The device is housed in a surface-mount TO-263 (D2PAK) package, with a junction-to-case thermal resistance of 1°C/W and junction-to-ambient (PCB mount) of 40°C/W. This P-Channel MOSFET is suitable for high-side switching, load switching, and power conversion applications in automotive and industrial systems.

SQM50P08-25L_GE3 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: SQM50P08-25L_GE3 P-Channel MOSFET
Subcategory: P-Channel MOSFET

SQM50P08-25L_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQM50P08-25L_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQM50P08-25L_GE3 Features

  • P-Channel MOSFET with 80V drain-source rating.
  • Continuous drain current up to 50A.
  • Low on-resistance of 25mOhm at 10V.
  • Operating temperature range -55°C to 175°C.
  • Surface mount TO-263 package.

SQM50P08-25L_GE3 Applications

  • Used in power management circuits.
  • Ideal for load switching applications.
  • Suitable for battery protection.
  • Used in automotive electronics.

SQM50P08-25L_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

-55°C to 175°C (junction).

What is the drain-source breakdown voltage?

-80V minimum at VGS = 0V, ID = -250µA.

What is the continuous drain current?

-50A at TC = 25°C (package limited).

What is the on-resistance?

25mOhm maximum at VGS = -10V, ID = -12.5A; 31mOhm at VGS = -4.5V.

What is the gate threshold voltage?

Typical 1.5V, maximum 2.5V at VDS = VGS, ID = -250µA.

What is the maximum power dissipation?

150W at TC = 25°C, derated to 50W at TC = 125°C.

What is the gate charge?

137nC maximum at VGS = 10V.

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