SQM120P10_10M1LGE3 The Vishay Dale SQM120P10_10M1LGE3 is a P-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 120A at 25°C. It is housed in a TO-263 package.
Mfr Part #:

SQM120P10_10M1LGE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQM120P10_10M1LGE3 is a P-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 120A at 25°C. It is housed in a TO-263 package.
✓ Total Stock: 9,853 pcs
$ Price Range: $2.56

SQM120P10_10M1LGE3 Available from 3 distributors

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✓ Non-Authorised
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8,220 pcs
8220 pcs On Request 1 On Request On Request On Request On Request On Request
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1,623 pcs
1623 pcs On Request 1 On Request On Request On Request On Request On Request
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10 pcs
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SQM120P10_10M1LGE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQM120P10_10M1LGE3 Description

Short technical summary and product information.

The Vishay Dale SQM120P10_10M1LGE3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 120A at a case temperature of 25°C, reducing to 78A at 125°C.

 

This MOSFET offers a low on-state resistance of 0.0101 Ohms at 30A and -10V gate-source voltage, and 0.0150 Ohms at 30A and -4.5V gate-source voltage. It operates within a wide temperature range of -55°C to +175°C.

 

The device is built using TrenchFET power MOSFET technology and comes in a TO-263 package, suitable for surface mounting. Its thermal resistance is low, with a junction-to-case rating of 0.4 °C/W, and a junction-to-ambient rating of 40 °C/W when mounted on a 1" square PCB.

 

Key electrical characteristics include an input capacitance of 9000 pF at 25V and a gate charge of 190 nC at 10V. The device is AEC-Q101 qualified.

SQM120P10_10M1LGE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQM120P10-10m1L P-Channel 100 V (D-S) 175 °C MOSFET

SQM120P10_10M1LGE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQM120P10_10M1LGE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQM120P10_10M1LGE3 Features

  • P-Channel MOSFET technology.
  • 100V drain-source voltage rating.
  • 120A continuous drain current.
  • Low on-state resistance.
  • TO-263 surface mount package.

SQM120P10_10M1LGE3 Applications

  • High-current power switching applications.
  • DC-DC converters and power supplies.
  • Motor control and load switching.
  • Battery protection circuits.

SQM120P10_10M1LGE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SQM120P10_10M1LGE3?

The minimum drain-source breakdown voltage is -100V at VGS=0V, ID=-250μA.

What package does the SQM120P10_10M1LGE3 come in?

It is available in a TO-263-3 (D²Pak) surface mount package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What is the gate threshold voltage?

The maximum gate-source threshold voltage is -2.5V at VDS=VGS, ID=-250μA.

What is the on-state resistance?

The maximum on-state resistance is 0.0101Ω at VGS=-10V, ID=30A, and 0.0150Ω at VGS=-4.5V.

What is the continuous drain current rating?

The maximum continuous drain current is -120A at TC=25°C and -78A at TC=125°C.

What is the maximum power dissipation?

The maximum power dissipation is 375W at TC=25°C and 125W at TC=125°C.

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