| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
58,400 pcs
|
58400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,696 pcs
|
1696 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SQM120P06-07L_GE3 is a P-Channel MOSFET from Vishay Dale designed for high-current switching applications. It features a drain-source breakdown voltage of -60V minimum and a continuous drain current of -120A at 25°C case temperature, derated to -98A at 125°C. The gate threshold voltage is typically -2V, with a range of -1.5V to -2.5V. Maximum power dissipation is 375W at 25°C case temperature. The device is avalanche rated with a single pulse avalanche energy of 320mJ and avalanche current of -80A. Pulsed drain current capability is -480A. The MOSFET is housed in a TO263 package, suitable for surface mount assembly. These specifications make it suitable for power management, motor control, and automotive systems where high efficiency and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -60V at VGS = 0V and ID = -250 μA.
The gate threshold voltage is typically -2V, with a minimum of -1.5V and a maximum of -2.5V at VDS = VGS and ID = -250 μA.
The continuous drain current is -120A at 25°C case temperature and -98A at 125°C case temperature.
The maximum power dissipation is 375W at 25°C case temperature.
The pulsed drain current is -480A with a pulse test condition of pulse width ≤ 300 μs and duty cycle ≤ 2%.
The single pulse avalanche energy is 320mJ with an inductance of 0.1 mH.
The maximum gate-source leakage current is ±100 nA at VGS = ±20V and VDS = 0V.