SQM120N06-06_GE3 N-Channel MOSFET rated for 60V drain-source voltage and 120A continuous drain current. Features low on-resistance of 6mOhm and high power dissipation of 230W.
Mfr Part #:

SQM120N06-06_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET rated for 60V drain-source voltage and 120A continuous drain current. Features low on-resistance of 6mOhm and high power dissipation of 230W.
✓ Total Stock: 9,600 pcs
$ Price Range: $2.56

SQM120N06-06_GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,600 pcs
9600 pcs On Request 1 On Request On Request 19+ On Request On Request

SQM120N06-06_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQM120N06-06_GE3 Description

Short technical summary and product information.

The SQM120N06-06_GE3 is an N-Channel MOSFET from Vishay Dale, designed for high-current power switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 120A at 25°C case temperature. The device achieves a maximum on-resistance of 6mOhm at 10V gate drive, enabling low conduction losses.

 

With a gate charge of 145nC and input capacitance of 6495pF, the MOSFET is suitable for moderate-frequency switching. It offers a maximum power dissipation of 230W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. The part is housed in a TO263 (D2PAK) surface-mount package, providing good thermal performance through the exposed drain pad.

 

Typical applications include power supplies, DC-DC converters, and motor control circuits where high efficiency and reliability are required. The device also features avalanche energy capability of 211mJ, enhancing robustness in inductive switching.

SQM120N06-06_GE3 Quick Information

Product Type: MOSFET
Canonical Name: SQM120N06-06_GE3
Subcategory: N-Channel MOSFET

SQM120N06-06_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQM120N06-06_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQM120N06-06_GE3 Features

  • N-Channel MOSFET rated for 60V drain-source voltage.
  • Continuous drain current up to 120A.
  • Low on-resistance of 6mOhm typical.
  • High power dissipation of 230W.
  • Avalanche energy rating of 211mJ.

SQM120N06-06_GE3 Applications

  • Used in high-efficiency power supplies.
  • Suitable for DC-DC converter circuits.
  • Ideal for motor control applications.
  • Applicable in automotive power systems.

SQM120N06-06_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SQM120N06-06_GE3?

The drain-source voltage rating is 60V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What is the maximum continuous drain current?

The maximum continuous drain current is 120A at 25°C case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 6mOhm at VGS=10V and ID=30A.

What is the gate charge?

The maximum gate charge is 145nC at VGS=10V.

What package is the SQM120N06-06_GE3 available in?

It is available in a TO263 (D2PAK) surface-mount package.

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