| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,095 pcs
|
2095 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SQM120N04-1M9_GE3 is an automotive-grade N-Channel TrenchFET Power MOSFET. It offers a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 120A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds(on)) of 1.9mOhm at 30A and 10V gate-source voltage, ensuring efficient power handling.
Designed with a low thermal resistance package, this MOSFET is AEC-Q101 qualified and 100% Rg and UIS tested, making it suitable for demanding automotive environments. It operates across a wide temperature range from -55°C to 175°C.
The component is housed in a TO-263 package, suitable for surface mounting. Its features include high continuous drain current capability and robust performance characteristics, making it ideal for power management applications in automotive systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V minimum at VGS=0V, ID=250µA.
120A maximum at case temperature 25°C.
1.9mOhm maximum at ID=30A, VGS=10V.
-55°C to 175°C.
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB surface mount.
Typical 3.0V, maximum 3.5V at VDS=VGS, ID=250µA.
300W at case temperature 25°C, derated to 100W at 125°C.