SQM120N02-1M3L_GE3 The Vishay Dale SQM120N02-1M3L_GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 120A continuous current rating. It is housed in a TO-263 package.
Mfr Part #:

SQM120N02-1M3L_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQM120N02-1M3L_GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 120A continuous current rating. It is housed in a TO-263 package.
✓ Total Stock: 899 pcs
$ Price Range: $2.56

SQM120N02-1M3L_GE3 Available from 1 distributor

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✓ Non-Authorised
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899 pcs
899 pcs On Request 1 On Request On Request 13+ On Request On Request

SQM120N02-1M3L_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQM120N02-1M3L_GE3 Description

Short technical summary and product information.

The Vishay Dale SQM120N02-1M3L_GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications. It features a 20V drain-source voltage (Vds) and a continuous drain current (Id) of 120A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds(on)) of 1.3mOhm at 40A and 10V gate-source voltage, ensuring efficient power transfer and minimizing heat generation. The gate-source threshold voltage (Vgs(th)) is typically 2V, with a maximum of 2.5V, and the maximum gate-source voltage is ±20V.

 

Designed for robust operation, it has a maximum power dissipation of 375W at 25°C case temperature and an operating junction and storage temperature range of -55°C to 175°C. The device is packaged in a TO-263 (D²Pak) surface-mount package, suitable for various electronic circuits.

 

Key electrical characteristics include an input capacitance (Ciss) of 14500pF at 10V and a gate charge (Qg) of 290nC at 10V. The MOSFET is AEC-Q101 qualified and compliant with RoHS Directive 2002/95/EC, and is halogen-free.

SQM120N02-1M3L_GE3 Quick Information

Product Type: MOSFET
Series: GE3
Canonical Name: Vishay Dale SQM120N02-1M3L_GE3 N-Channel 20V 120A TO-263 MOSFET
Subcategory: Single

SQM120N02-1M3L_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SQM120N02-1M3L_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQM120N02-1M3L_GE3 Features

  • 20V drain-source voltage rating.
  • 120A continuous drain current.
  • Low 1.3mOhm on-resistance.
  • TO-263 surface mount package.
  • AEC-Q101 qualified.

SQM120N02-1M3L_GE3 Applications

  • Suitable for high-current switching.
  • Power management applications.
  • Automotive electronics.
  • Industrial control systems.

SQM120N02-1M3L_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SQM120N02-1M3L_GE3?

The drain-source voltage is 20V.

What is the continuous drain current for the SQM120N02-1M3L_GE3?

The continuous drain current is 120A at 25°C case temperature.

What is the typical on-resistance of the SQM120N02-1M3L_GE3?

The on-resistance is 1.3mOhm at 40A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SQM120N02-1M3L_GE3 in?

It is in a TO-263 (D²Pak) surface mount package.

Is the SQM120N02-1M3L_GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is this MOSFET halogen-free?

Yes, it is halogen-free.

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