| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SQM110N05-06L_GE3 is an N-Channel MOSFET from Vishay Dale designed for high-current switching applications. It offers a maximum drain-source voltage of 55V and a continuous drain current of 110A at Tc. The device features a low on-resistance of 6 mOhm at 30A and 10V gate drive, minimizing conduction losses. Maximum power dissipation is 157W at Tc, and the gate charge is 110 nC at 10V, indicating moderate switching speed.
This MOSFET is housed in a TO263 package, suitable for surface-mount assembly. It is commonly used in power management circuits, DC-DC converters, and motor drive systems where high efficiency and reliability are required. The low on-resistance and high current capability make it ideal for applications demanding low voltage drop and high thermal performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
110A at Tc.
6 mOhm at 30A and 10V gate drive.
157W at Tc.
110 nC at 10V.