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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,575 pcs
|
13575 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
4,220 pcs
|
4220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Drain Current (Maximum @ TC = 125 °C) | |
| Continuous Drain Current (Maximum @ Tc=25 °C) | |
| Continuous Source Current (Diode Conduction) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Source Leakage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Mounting Type | |
| On Resistance (Maximum @ Vgs=10 V) | |
| On Resistance (Maximum @ Vgs=4.5 V) | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ TC=125 °C) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Avalanche Current | |
| Single Pulse Avalanche Energy | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current |
The Vishay Dale SQM100N10-10_GE3 is an automotive-grade N-Channel TrenchFET Power MOSFET designed for high-performance applications. It offers a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 100A at 25°C.
Key electrical characteristics include a low on-resistance (RDS(on)) of 10.5mOhm at 30A and 10V, and 12.0mOhm at Vgs = 4.5V. The device features a gate threshold voltage (Vgs(th)) of 2.5V maximum at 250µA and a gate-source voltage (Vgs) range of ±20V.
With a maximum power dissipation of 375W at 25°C and a junction-to-case thermal resistance of 0.4°C/W, this MOSFET is suitable for demanding thermal environments. It operates across a wide temperature range of -55°C to 175°C.
The SQM100N10-10_GE3 is supplied in a TO-263 surface-mount package, offering low thermal resistance. It is AEC-Q101 qualified, 100% Rg and UIS tested, making it reliable for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The typical on-resistance at 10V gate-source voltage is 10.5 mOhm.
The continuous drain current rating at 25°C is 100 A.
The operating temperature range is -55°C to 175°C.
The SQM100N10-10_GE3 is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.