| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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964 pcs
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964 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay SQJQ910EL-T1_GE3 is an automotive-qualified dual N-channel MOSFET featuring TrenchFET power MOSFET technology. It is rated for a drain-source voltage of 100V and a continuous drain current of 70A per leg at 25°C.
This MOSFET exhibits a low on-resistance of 8.6mOhm at 10A and 10V, and 11.4mOhm at 4.5V. It operates across a wide temperature range from -55°C to 175°C, making it suitable for demanding automotive environments. The device is housed in a PowerPAK 8x8L package, designed for surface mounting.
Key electrical characteristics include an input capacitance of 2832pF at 50V and a gate charge of 58nC at 10V. The maximum power dissipation is 187W at 25°C. The device is AEC-Q101 qualified and 100% R_g and UIS tested, ensuring high reliability.
This MOSFET is fully lead-free and meets RoHS 3 compliance standards. Its robust design and specifications make it suitable for various automotive power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
PowerPAK 8x8 Dual surface mount.
-55°C to 175°C.
Yes, it is fully lead (Pb)-free.
70A at Tc=25°C.
8.6mOhm at 10V gate drive.
58nC at 10V.