| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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113,020 pcs
|
113020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The Vishay Dale SQJQ900E-T1_GE3 is a dual N-channel power MOSFET designed for demanding applications. It offers a 40V drain-source voltage and a high continuous drain current capability of 100A at 25°C.
Key electrical characteristics include a low on-resistance (Rds On) of 3.9mOhm at 20A and 10V, and 4.7mOhm at 20A and 4.5V. The device also features a gate charge of 120nC at 10V and an input capacitance of 5900pF at 20V.
Operating across a wide temperature range from -55°C to +175°C, this MOSFET is suitable for high-temperature environments. It is housed in a PowerPAK 8x8L package and designed for surface mounting.
The SQJQ900E-T1_GE3 is AEC-Q101 qualified and 100% R_g and UIS tested, indicating its suitability for automotive applications. It is also fully lead (Pb)-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
100 A at 25°C case temperature.
3.9 mOhm maximum at 20A or 100A.
-55°C to +175°C.
PowerPAK 8x8L surface-mount package.
2.5 V maximum at 250µA drain current.
75 W at 25°C case temperature.