SQJQ480E-T1_GE3 The Vishay Dale SQJQ480E-T1_GE3 is an 80V N-Channel MOSFET designed for high-power applications. It features a low on-resistance and is housed in a PowerPAK 8x8 package.
Mfr Part #:

SQJQ480E-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJQ480E-T1_GE3 is an 80V N-Channel MOSFET designed for high-power applications. It features a low on-resistance and is housed in a PowerPAK 8x8 package.
✓ Total Stock: 3,020 pcs
$ Price Range: $2.56

SQJQ480E-T1_GE3 Available from 1 distributor

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✓ Non-Authorised
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SQJQ480E-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

SQJQ480E-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJQ480E-T1_GE3 is an automotive-grade N-Channel MOSFET with a drain-source voltage rating of 80V. It utilizes TrenchFET technology for enhanced performance and features a low on-resistance of 3mOhm at 20A and 10V gate drive.

 

This MOSFET is rated for a continuous drain current of 150A at 25°C case temperature and 87A at 125°C. It offers a maximum power dissipation of 136W at 25°C and operates across a wide temperature range of -55°C to 175°C.

 

The device is supplied in a compact PowerPAK 8x8 package, suitable for surface mounting. It is AEC-Q101 qualified, ensuring reliability for automotive applications. The MOSFET is also fully lead (Pb)-free.

 

Key electrical characteristics include an input capacitance of 8625 pF at 25V and a gate charge of 144 nC at 10V. The gate-source voltage is rated at ±20V, with a gate threshold voltage of 3.5V at 250µA.

SQJQ480E-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQJQ480E-T1_GE3 N-Channel MOSFET
Subcategory: N-Channel

SQJQ480E-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Fully lead (Pb)-free device

SQJQ480E-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJQ480E-T1_GE3 Features

  • 80V drain-source voltage rating.
  • Low 3mOhm Rds On at 20A.
  • 150A continuous drain current.
  • AEC-Q101 qualified automotive grade.
  • Compact PowerPAK 8x8 package.

SQJQ480E-T1_GE3 Applications

  • Suitable for automotive power systems.
  • Ideal for high-current switching.
  • Used in power management circuits.
  • Efficient thermal management required.

SQJQ480E-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SQJQ480E-T1_GE3?

The maximum drain-source voltage is 80 V.

What is the typical on-resistance of the SQJQ480E-T1_GE3?

The on-resistance is a maximum of 3 mOhm at 20A and 10V.

What is the continuous drain current rating?

The continuous drain current is 150A at 25°C case temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SQJQ480E-T1_GE3 supplied in?

It is supplied in a PowerPAK 8x8 package.

Is the SQJQ480E-T1_GE3 AEC-Q101 qualified?

Yes, the device is AEC-Q101 qualified.

Is this device lead-free?

Yes, it is a fully lead (Pb)-free device.

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