SQJQ466E-T1_GE3 The Vishay Dale SQJQ466E-T1_GE3 is an N-Channel MOSFET designed for high-power applications. It features a 60V drain-source voltage and a 200A continuous drain current.
Mfr Part #:

SQJQ466E-T1_GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJQ466E-T1_GE3 is an N-Channel MOSFET designed for high-power applications. It features a 60V drain-source voltage and a 200A continuous drain current.
✓ Total Stock: 1,080 pcs
$ Price Range: $2.56

SQJQ466E-T1_GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
80 pcs
80 pcs On Request 1 On Request On Request On Request On Request On Request

SQJQ466E-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJQ466E-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJQ466E-T1_GE3 is an AEC-Q101 qualified N-Channel Power MOSFET. It is built using TrenchFET® technology, offering robust performance for demanding applications.

 

This MOSFET boasts a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 200A at 25°C case temperature. Its low on-resistance (Rds(on)) is 1.9mOhm at 10A and 10V gate-source voltage, minimizing conduction losses. The device operates across a wide temperature range from -55°C to +175°C.

 

Packaged in an 8x8L PowerPAK, this surface-mount device is suitable for applications requiring high current density and efficient thermal management. The thin profile of 1.9mm is beneficial for space-constrained designs. It is 100% R_g and UIS tested, ensuring reliability.

 

Key electrical characteristics include a gate charge (Qg) of 180nC at 10V and an input capacitance (Ciss) of 10210pF at 25V. The maximum power dissipation is rated at 150W at 25°C case temperature.

SQJQ466E-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQJQ466E-T1_GE3 N-Channel 60V Power MOSFET
Subcategory: N-Channel

SQJQ466E-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJQ466E-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJQ466E-T1_GE3 Features

  • AEC-Q101 qualified automotive MOSFET.
  • Low on-resistance minimizes conduction losses.
  • High continuous drain current capability.
  • Wide operating temperature range.
  • Thin 1.9mm height PowerPAK package.

SQJQ466E-T1_GE3 Applications

  • High-current DC-DC converter designs.
  • Motor drive and power switching circuits.
  • Battery management and protection systems.
  • Server and telecom power supplies.
  • Automotive load switching applications.

SQJQ466E-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SQJQ466E-T1_GE3?

The maximum drain-to-source voltage is 60V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 200A at 25°C case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 1.9mOhm at 10A drain current and 10V gate-source voltage.

What package does the SQJQ466E-T1_GE3 come in?

It comes in a PowerPAK 8x8L surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What is the maximum power dissipation at 25°C?

The maximum power dissipation is 150W at 25°C case temperature.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3.5V at 250µA drain current.

Home
Account

Categories