| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SQJQ410EL-T1_GE3 is an automotive-qualified N-Channel MOSFET featuring TrenchFET power MOSFET technology. It is rated for a drain-source voltage of 100V and can handle a continuous drain current of up to 135A at 25°C, with a reduced current rating of 78A at 125°C. The device exhibits a low on-resistance of 3.4mOhm at 10V Vgs and 10V Vds.
This MOSFET is designed for high-power applications, with a maximum power dissipation of 136W at 25°C. It operates across a wide temperature range from -55°C to +175°C. The component is supplied in a PowerPAK 8x8 package, suitable for surface mounting.
Key electrical characteristics include a gate-source voltage range of ±20V and an input capacitance of 7350pF. The device is AEC-Q101 qualified, ensuring reliability for automotive use. It is also fully lead-free and meets RoHS3 compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.82 | $2.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V.
PowerPAK 8x8 (PowerPAK 8 x 8) surface-mount package.
-55°C to +175°C.
135 A.
3.4 mOhm.
2.5 V at Id = 250 µA.
136 W.