SQJQ184E-T1_GE3 The Vishay Dale SQJQ184E-T1_GE3 is an automotive-grade N-Channel MOSFET with an 80V drain-source voltage rating. It features a low on-resistance and a high continuous drain current capability.
Mfr Part #:

SQJQ184E-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJQ184E-T1_GE3 is an automotive-grade N-Channel MOSFET with an 80V drain-source voltage rating. It features a low on-resistance and a high continuous drain current capability.
✓ Total Stock: 24,000 pcs
$ Price Range: $2.56

SQJQ184E-T1_GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
24,000 pcs
24000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16

SQJQ184E-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJQ184E-T1_GE3 Description

Short technical summary and product information.

This Vishay Dale SQJQ184E-T1_GE3 is an automotive-qualified N-Channel power MOSFET designed for high-performance applications. It offers a drain-source voltage (Vds) of 80V and a continuous drain current (Id) of up to 430A at 25°C case temperature.

 

The MOSFET boasts a low on-resistance (RDS(on)) of 1.4mOhm maximum at 20A and 10V gate-source voltage, ensuring efficient power transfer. It operates across a wide temperature range from -55°C to 175°C (TJ).

 

Packaged in a surface-mount PowerPAK® 8x8, this component is suitable for space-constrained designs. Its TrenchFET® Gen IV technology and AEC-Q101 qualification make it reliable for demanding automotive environments.

 

Key electrical parameters include a gate-source voltage (Vgs) of ±20V, a gate threshold voltage (Vgs(th)) of 3.5V maximum, and input capacitance (Ciss) of 16010 pF. The maximum power dissipation is rated at 600W at 25°C case temperature.

SQJQ184E-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQJQ184E-T1_GE3 N-Channel 80V Power MOSFET
Subcategory: Power MOSFET

SQJQ184E-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJQ184E-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJQ184E-T1_GE3 Features

  • Automotive N-Channel 80V Power MOSFET.
  • Low 1.4mOhm Rds On at 10V.
  • High 430A continuous drain current.
  • Wide -55°C to 175°C operating temperature.
  • Surface mount PowerPAK® 8x8 package.

SQJQ184E-T1_GE3 Applications

  • Suitable for automotive power systems.
  • Ideal for high-efficiency power switching.
  • Used in demanding thermal environments.
  • Designed for high current applications.

SQJQ184E-T1_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SQJQ184E-T1_GE3?

The drain-source breakdown voltage is 80V.

What is the maximum continuous drain current?

The maximum continuous drain current is 430A at 25°C case temperature.

What is the Rds On (Max) at Vgs = 10V?

The maximum on-resistance is 1.4mOhm at 20A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the SQJQ184E-T1_GE3?

The component is supplied in a PowerPAK® 8x8 package and is surface mountable.

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