| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQJB68EP-T1_GE3 is a dual N-channel MOSFET featuring TrenchFET technology and AEC-Q101 qualification. This device is rated for a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 11A per leg at 25°C.
Key electrical characteristics include a low on-resistance (Rds(on)) of 92mOhm at 4A and 10V Vgs, and 117mOhm at Vgs = 4.5V. The gate charge (Qg) is a maximum of 8nC at 10V Vgs, and the gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA Id.
This MOSFET operates over a wide temperature range from -55°C to 175°C. It is housed in a PowerPAK SO-8 Dual package, suitable for surface mounting. The device is designed for applications requiring robust power handling and efficient switching.
Material categorization indicates it is lead (Pb)-free and halogen-free. The product summary highlights its dual N-channel configuration and suitability for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 100V.
The Rds(on) is a maximum of 92mOhm at 4A and 10V Vgs.
The continuous drain current is 11A at 25°C case temperature.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in the PowerPAK SO-8 Dual package.
The Moisture Sensitivity Level is 1.