SQJA82EP-T1_GE3 The Vishay Dale SQJA82EP-T1_GE3 is an automotive-qualified N-Channel MOSFET. It offers an 80V drain-source voltage and a continuous drain current of 60A.
Mfr Part #:

SQJA82EP-T1_GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJA82EP-T1_GE3 is an automotive-qualified N-Channel MOSFET. It offers an 80V drain-source voltage and a continuous drain current of 60A.
✓ Total Stock: 234,000 pcs
$ Price Range: $2.56

SQJA82EP-T1_GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
228,000 pcs
228000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request

SQJA82EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJA82EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJA82EP-T1_GE3 is an automotive-grade N-Channel MOSFET designed for high-performance applications. It features a TrenchFET power MOSFET design and is AEC-Q101 qualified, ensuring reliability in demanding environments.

 

Key electrical specifications include a maximum drain-source voltage of 80V and a continuous drain current of 60A at 25°C. The on-resistance is rated at a low 8.2mOhm at 10A and 10V gate-source voltage. The device operates over a wide temperature range from -55°C to +175°C.

 

This MOSFET is housed in a PowerPAK SO-8 surface mount package, offering efficient thermal performance with a junction-to-case thermal resistance of 2.2°C/W. It is suitable for various power management applications where high current and voltage handling are required.

SQJA82EP-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQJA82EP-T1_GE3 N-Channel 80 V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SQJA82EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQJA82EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJA82EP-T1_GE3 Features

  • Automotive AEC-Q101 qualified MOSFET.
  • 80V drain-source voltage rating.
  • 60A continuous drain current capability.
  • Low 8.2mOhm Rds On at 10A, 10V.
  • Surface mount PowerPAK SO-8 package.

SQJA82EP-T1_GE3 Applications

  • Suitable for automotive power systems.
  • Ideal for high-current switching applications.
  • Used in power management circuits.
  • Designed for demanding thermal environments.

SQJA82EP-T1_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SQJA82EP-T1_GE3?

The maximum drain-source voltage (Vds) for the SQJA82EP-T1_GE3 is 80V.

What is the continuous drain current of the SQJA82EP-T1_GE3?

The continuous drain current (Id) for the SQJA82EP-T1_GE3 is 60A at 25°C.

What is the on-resistance (Rds On) of the SQJA82EP-T1_GE3?

The Rds On is a maximum of 8.2mOhm at 10A and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the SQJA82EP-T1_GE3 supplied in?

The SQJA82EP-T1_GE3 is supplied in a PowerPAK SO-8 surface mount package.

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