| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
46 pcs
|
46 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SQJA80EP-T1_GE3 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 80V and can handle a continuous current of 60A at the case temperature.
The MOSFET offers a low on-resistance (Rds On) of 7mOhm at 10A and 10V Vgs, with a gate charge (Qg) of 75nC at 10V. The gate threshold voltage (Vgs(th)) is 2.5V at 250µA. It operates within a temperature range of -55°C to 175°C (TJ).
The component is packaged in a PowerPAK SO-8 surface mount package, suitable for automated assembly processes. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
Key electrical characteristics include a maximum power dissipation of 68W (Tc) and a maximum gate-to-source voltage of ±20V. The drive voltage ranges from 4.5V to 10V for optimal Rds On performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
PowerPAK SO-8 surface-mount package.
-55°C to 175°C junction temperature.
60A at case temperature.
7mOhm at 10V gate drive and 10A drain current.
Maximum 2.5V at 250µA drain current.