| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SQJA76EP-T1_GE3 is an automotive-qualified N-Channel power MOSFET featuring TrenchFET technology. It is designed for high-performance applications requiring robust power handling capabilities.
The MOSFET boasts a drain-source voltage of 40V and a continuous drain current of 75A at 25°C case temperature, with a low on-resistance of 2.4mOhm at 10A and 10V gate-source voltage. It operates within a wide temperature range of -55°C to 175°C.
Packaged in a surface-mount PowerPAK SO-8 configuration, this component is suitable for various power management circuits. The AEC-Q101 qualification ensures reliability for automotive and industrial use cases.
Key electrical parameters include a gate threshold voltage of 3.5V, input capacitance of 5250pF, and gate charge of 100nC. The device also offers a maximum power dissipation of 68W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40 V.
The continuous drain current is 75 A at Tc = 25°C and 65.6 A at Tc = 125°C.
The maximum on-resistance (Rds On) is 2.4 mOhm at Id = 10 A and Vgs = 10 V.
The operating junction and storage temperature range is -55°C to 175°C.
It comes in a PowerPAK SO-8 surface-mount package.
The maximum gate threshold voltage (Vgs(th)) is 3.5 V at Id = 250 µA.
The maximum input capacitance (Ciss) is 5250 pF at Vds = 25 V.