Mfr Part #:

SQJA36EP-T1_GE3

Mfr Name: Vishay

The Vishay Dale SQJA36EP-T1_GE3 is an N-Channel MOSFET designed for high-power applications. It features a 40V drain-source voltage and a continuous drain current of 350A.

✓ Total Stock: 257,020 pcs

$ Price Range: $0.69

SQJA36EP-T1_GE3 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Risen Electronics ✓ Non-Authorised Inventory information	252,000 pcs On Request	252000 pcs	On Request	1	On Request	On Request	On Request	On Request	2026-02-16 21:33:16
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,020 pcs On Request	4020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SQJA36EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJA36EP-T1_GE3 is an automotive-qualified N-Channel power MOSFET. It utilizes TrenchFET Gen IV technology and is AEC-Q101 qualified, ensuring high reliability.

This MOSFET offers a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 350A at 25°C case temperature, with a reduced current of 234A at 125°C. Its low on-resistance (Rds On) is 1.24mOhm at 15A and 10V gate-source voltage, contributing to efficient power handling. The maximum power dissipation is rated at 500W at 25°C case temperature.

Designed for surface mounting, the SQJA36EP-T1_GE3 comes in a PowerPAK SO-8L package. It operates across a wide temperature range from -55°C to 175°C. The device is 100% R_g and UIS tested, with a Q_gd/Q_gs ratio less than 1 for optimized switching characteristics.

Key electrical parameters include an input capacitance of 6636 pF at 25V and a gate charge of 107 nC at 10V. The gate threshold voltage is 3.5V at 250µA. This MOSFET is suitable for demanding power applications requiring robust performance and high efficiency.

SQJA36EP-T1_GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Dale SQJA36EP-T1_GE3 N-Channel MOSFET

Subcategory: Single FETs

SQJA36EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SQJA36EP-T1_GE3 Estimated Pricing

Qty	Low	High
1+	$0.69	$0.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJA36EP-T1_GE3 Features

Automotive AEC-Q101 qualified MOSFET.
40V drain-source voltage rating.
350A continuous drain current.
Low 1.24mOhm Rds On.
PowerPAK SO-8L surface mount package.

SQJA36EP-T1_GE3 Applications

Ideal for high-power switching circuits.
Suitable for automotive power management.
Used in industrial motor control.
Efficient power conversion applications.

SQJA36EP-T1_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the SQJA36EP-T1_GE3?

40 volts.

What package is the SQJA36EP-T1_GE3 available in?

PowerPAK SO-8L surface mount package.

What is the operating junction temperature range?

-55°C to 175°C.

What is the maximum continuous drain current?

350A at Tc=25°C.

What is the typical on-resistance?

1.24 milliohm maximum at Vgs=10V and Id=15A.

What is the maximum power dissipation?

500 watts at Tc=25°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	350A (Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6636 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	500W (Tc)
Rds On (Max) @ Id, Vgs	1.24mOhm @ 15A, 10V
Supplier Device Package	PowerPAK SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 250µA