SQJA20EP-T1_GE3 The Vishay Dale SQJA20EP-T1_GE3 is an N-Channel MOSFET with a 200V drain-source voltage and a continuous drain current of 22.5A. It is housed in a surface-mount PowerPAK SO-8 package.
Mfr Part #:

SQJA20EP-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJA20EP-T1_GE3 is an N-Channel MOSFET with a 200V drain-source voltage and a continuous drain current of 22.5A. It is housed in a surface-mount PowerPAK SO-8 package.
✓ Total Stock: 21 pcs
$ Price Range: $2.56

SQJA20EP-T1_GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
21 pcs
21 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

SQJA20EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJA20EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJA20EP-T1_GE3 is an automotive-qualified N-Channel Power MOSFET designed for high-performance applications. It features a 200V drain-source voltage (Vds) and a continuous drain current (Id) of 22.5A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds(on)) of 50mOhm at 10A and 10V Vgs, with a gate charge (Qg) of 27nC at 10V. The operating junction temperature range is -55°C to +175°C, and it has a maximum power dissipation of 68W at 25°C case temperature.

 

Designed with TrenchFET technology, the SQJA20EP-T1_GE3 is suitable for demanding power management tasks. It comes in a surface-mount PowerPAK SO-8 package, facilitating integration into compact designs.

 

Key electrical characteristics include a gate-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 3.5V at 250µA. The input capacitance (Ciss) is 1300pF at 25V.

SQJA20EP-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQJA20EP-T1_GE3 N-Channel 200V 22.5A PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SQJA20EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJA20EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJA20EP-T1_GE3 Features

  • Automotive AEC-Q101 qualified MOSFET.
  • 200V drain-source voltage rating.
  • 22.5A continuous drain current.
  • Low 50mOhm on-resistance.
  • Surface mount PowerPAK SO-8 package.

SQJA20EP-T1_GE3 Applications

  • Suitable for automotive power systems.
  • Ideal for high-efficiency power switching.
  • Used in DC-DC converter designs.
  • Applications requiring robust thermal management.

SQJA20EP-T1_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SQJA20EP-T1_GE3?

The drain-source voltage rating is 200V.

What is the continuous drain current rating?

The continuous drain current is 22.5A at 25°C case temperature, derated to 13A at 125°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 50mOhm at 10A drain current and 10V gate drive; typical on-resistance is 50mOhm at 10V and 52mOhm at 7.5V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package is the SQJA20EP-T1_GE3 available in?

It is available in the PowerPAK SO-8 surface-mount package.

What is the gate charge of this MOSFET?

The maximum gate charge is 27nC at 10V gate voltage.

Home
Account

Categories