Mfr Part #:

SQJA06EP-T1_GE3

Mfr Name: Vishay

The Vishay Siliconix SQJA06EP-T1_GE3 is a 60V N-Channel MOSFET designed for surface mount applications. It offers high current capability and a wide operating temperature range.

✓ Total Stock: 4,236 pcs

$ Price Range: $2.56

SQJA06EP-T1_GE3 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Risen Electronics ✓ Non-Authorised Inventory information	3,000 pcs On Request	3000 pcs	On Request	1	On Request	On Request	On Request	On Request	2026-02-16 21:33:16
Xingangxin ✓ Non-Authorised Inventory information	1,236 pcs On Request	1236 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SQJA06EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Siliconix SQJA06EP-T1_GE3 is an N-Channel MOSFET featuring TrenchFET power technology. It is rated for a drain-source voltage of 60V and a continuous drain current of 57A at 25°C case temperature.

This MOSFET boasts a low on-resistance of 8.7mOhm at 10A and 10V Vgs, minimizing power loss. It is designed for surface mounting in the PowerPAK SO-8 package, offering efficient thermal performance with a junction-to-case thermal resistance of 2.7°C/W.

The operating junction and storage temperature range is -55°C to +175°C, making it suitable for demanding environments. The device is AEC-Q101 qualified and 100% R_g and UIS tested, ensuring reliability for automotive and industrial applications.

Key electrical characteristics include an input capacitance of 2800pF at 25V and a gate charge of 45nC at 10V. The gate-source voltage maximum is ±20V, and the gate threshold voltage is 3.5V at 250µA.

SQJA06EP-T1_GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Siliconix SQJA06EP-T1_GE3 N-Channel 60V PowerPAK SO-8 MOSFET

Subcategory: Single

SQJA06EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SQJA06EP-T1_GE3 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJA06EP-T1_GE3 Features

60V drain-source voltage rating.
57A continuous drain current capability.
Low 8.7mOhm Rds On at 10A/10V.
PowerPAK SO-8 surface mount package.
AEC-Q101 qualified for automotive use.

SQJA06EP-T1_GE3 Applications

Ideal for high-current switching applications.
Suitable for power management circuits.
Used in automotive power systems.
Effective in DC-DC converters.
Applicable in industrial motor control.

SQJA06EP-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the SQJA06EP-T1_GE3?

60 V.

What package type does the SQJA06EP-T1_GE3 use?

PowerPAK SO-8.

What is the operating temperature range?

-55°C to 175°C.

What is the on-resistance of this MOSFET?

8.7 milliohms maximum at 10A drain current and 10V gate-source voltage.

What is the continuous drain current rating?

57 A at case temperature 25°C.

What is the gate charge?

45 nC at 10V gate-source voltage.

What is the input capacitance?

2800 pF at 25V drain-source voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	57A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	55W (Tc = 25 °C)
Rds On (Max) @ Id, Vgs	8.7mOhm @ 10A, 10V
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 250µA