SQJ974EP-T1_GE3 The Vishay Dale SQJ974EP-T1_GE3 is a dual N-channel MOSFET with a 100V drain-source voltage rating. It is designed for surface mount applications in a PowerPAK SO-8 Dual package.
Mfr Part #:

SQJ974EP-T1_GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJ974EP-T1_GE3 is a dual N-channel MOSFET with a 100V drain-source voltage rating. It is designed for surface mount applications in a PowerPAK SO-8 Dual package.
✓ Total Stock: 164,757 pcs
$ Price Range: $1.64

SQJ974EP-T1_GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
160,020 pcs
160020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,737 pcs
4737 pcs On Request 1 On Request On Request On Request On Request On Request

SQJ974EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SQJ974EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJ974EP-T1_GE3 is a dual N-channel MOSFET featuring TrenchFET power MOSFET technology. It offers a 100V drain-source voltage and a continuous drain current of 30A at 25°C. The device exhibits a low on-resistance of 25.5mOhm at 10A and 10V Vgs, and 32.5mOhm at 10A and 4.5V Vgs. Its input capacitance is 1050pF at 25V, and gate charge is 30nC at 10V.

 

This MOSFET is AEC-Q101 qualified and 100% R_g and UIS tested, making it suitable for demanding automotive applications. It operates within a junction and storage temperature range of -55°C to 175°C. The device is packaged in a PowerPAK SO-8 Dual surface mount package, with a maximum power dissipation of 48W at 25°C and 16W at 125°C. The junction-to-ambient thermal resistance is 85°C/W, and junction-to-case is 3.1°C/W.

 

The SQJ974EP-T1_GE3 is lead (Pb)-free and halogen-free. It is designed for applications requiring high performance and reliability in a compact footprint.

SQJ974EP-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQJ974EP Dual N-Channel 100V MOSFET
Subcategory: Dual N-Channel

SQJ974EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQJ974EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ974EP-T1_GE3 Features

  • Dual N-Channel 100V MOSFET.
  • TrenchFET power MOSFET technology.
  • AEC-Q101 qualified for automotive.
  • Low Rds On: 25.5mOhm at 10V.
  • PowerPAK SO-8 Dual package.

SQJ974EP-T1_GE3 Applications

  • Suitable for automotive applications.
  • High-efficiency power switching.
  • Compact surface mount design.
  • Reliable thermal performance.

SQJ974EP-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SQJ974EP-T1_GE3?

The drain-source voltage rating is 100V.

What is the continuous drain current of the SQJ974EP-T1_GE3?

The continuous drain current is 30A at 25°C.

What is the on-resistance (Rds On) for the SQJ974EP-T1_GE3?

The Rds On is a maximum of 25.5mOhm at 10A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SQJ974EP-T1_GE3 supplied in?

It is supplied in a PowerPAK SO-8 Dual package.

Is the SQJ974EP-T1_GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the SQJ974EP-T1_GE3 lead-free and halogen-free?

Yes, it is lead (Pb)-free and halogen-free.

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